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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 40V 42A D2PAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D-PAK (TO-252AA) 0 400 N-Channel - 40V 56A (Tc) 4.9 mOhm @ 56A, 10V 2.5V @ 100µA 53nC @ 4.5V 3617pF @ 25V 10V ±16V 143W (Tc)
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Per Unit
$0.989
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RFQ
Infineon Technologies MOSFET N-CH 40V 87A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D-PAK (TO-252AA) 0 3000 N-Channel - 40V 56A (Tc) 9.2 mOhm @ 30A, 10V 4V @ 250µA 71nC @ 10V 2150pF @ 25V 10V ±20V 140W (Tc)
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Per Unit
$0.353
RFQ
2,000
In-stock
Infineon Technologies MOSFET N-CH 40V 56A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET®, StrongIRFET™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active TO-252, (D-Pak) 0 2000 N-Channel - 40V 56A (Tc) 5.1 mOhm @ 55A, 10V 3.9V @ 50µA 68nC @ 10V 2110pF @ 25V 6V, 10V ±20V 83W (Tc)
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Per Unit
$0.510
RFQ
2,000
In-stock
Infineon Technologies MOSFET N-CH 40V 56A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET®, StrongIRFET™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D-PAK 0 2000 N-Channel - 40V 56A (Tc) 3.9 mOhm @ 56A, 10V 3.9V @ 100µA 130nC @ 10V 3150pF @ 25V 6V, 10V ±20V 98W (Tc)
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