- Manufacture :
- Package / Case :
- Packaging :
- Mounting Type :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs (Max) :
- Power Dissipation (Max) :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 8HSOF | 8-PowerSFN | Automotive, AEC-Q101, OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-HSOF-8-1 | 0 | 2000 | N-Channel | - | 40V | 250A (Tc) | 1.7 mOhm @ 100A, 10V | 4V @ 80µA | 100nC @ 10V | 7900pF @ 25V | 10V | ±20V | 188W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101, OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D²PAK (TO-263AB) | 0 | 1000 | N-Channel | - | 40V | 120A (Tc) | 1.7 mOhm @ 100A, 10V | 2.2V @ 110µA | 190nC @ 10V | 14560pF @ 25V | 4.5V, 10V | +20V, -16V | 158W (Tc) | |||
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VIEW | Texas instruments | GEN1.4 40V-20V | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | NexFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | DDPAK/TO-263-3 | 0 | 500 | N-Channel | - | 40V | 274A (Tc) | 1.7 mOhm @ 100A, 10V | 2.3V @ 250µA | 153nC @ 10V | 11400pF @ 20V | 4.5V, 10V | ±20V | 250W (Ta) | |||
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In-stock
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Texas instruments | MOSFET N-CH 40V 200A TO220-3 | TO-220-3 | NexFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220-3 | 0 | 1 | N-Channel | - | 40V | 200A (Ta) | 1.7 mOhm @ 100A, 10V | 2.3V @ 250µA | 75nC @ 4.5V | 11400pF @ 20V | 4.5V, 10V | ±20V | 250W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 100A PQFN5X6 | 8-PowerVDFN | HEXFET®, StrongIRFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-PQFN (5x6) | 0 | 4000 | N-Channel | - | 40V | 100A (Tc) | 1.7 mOhm @ 100A, 10V | 3.7V @ 150µA | 152nC @ 10V | 5406pF @ 25V | 6V, 10V | ±20V | 125W (Tc) |
