- Packaging :
- Mounting Type :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 40V 195A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 800 | N-Channel | - | 40V | 195A (Tc) | 1.2 mOhm @ 100A, 10V | 3.9V @ 250µA | 450nC @ 10V | 14240pF @ 25V | 10V | ±20V | 375W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 195A TO-262 | TO-262-3 Short Leads, I²Pak | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1000 | N-Channel | - | 40V | 195A (Tc) | 1.2 mOhm @ 100A, 10V | 3.9V @ 250µA | 450nC @ 10V | 14240pF @ 25V | 10V | ±20V | 375W (Tc) | |||
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Infineon Technologies | MOSFET N-CH 40V 195A TO220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 40V | 195A (Tc) | 1.3 mOhm @ 100A, 10V | 3.9V @ 250µA | 450nC @ 10V | 14240pF @ 25V | 10V | ±20V | 375W (Tc) |
