- Series :
- Packaging :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 40V 100A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 40V | 100A (Tc) | 9 mOhm @ 60A, 10V | 4V @ 250µA | 93nC @ 10V | 2900pF @ 25V | 10V | ±20V | 2.4W (Ta), 170W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 100A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 40V | 100A (Tc) | 9 mOhm @ 60A, 10V | 4V @ 250µA | 93nC @ 10V | 2900pF @ 25V | 10V | ±20V | 2.4W (Ta), 170W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 100A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 50 | N-Channel | - | 40V | 100A (Tc) | 9 mOhm @ 60A, 10V | 4V @ 250µA | 93nC @ 10V | 2900pF @ 25V | 10V | ±20V | 2.4W (Ta), 170W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 100A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 50 | N-Channel | - | 40V | 100A (Tc) | 9 mOhm @ 60A, 10V | 4V @ 250µA | 93nC @ 10V | 2900pF @ 25V | 10V | ±20V | 2.4W (Ta), 170W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 123A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 800 | N-Channel | - | 40V | 123A (Tc) | 3.3 mOhm @ 70A, 10V | 3.9V @ 100µA | 93nC @ 10V | 3183pF @ 25V | 10V | ±20V | 99W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 123A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1000 | N-Channel | - | 40V | 123A (Tc) | 3.3 mOhm @ 70A, 10V | 3.9V @ 100µA | 93nC @ 10V | 3183pF @ 25V | 10V | ±20V | 99W (Tc) | ||||
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778
In-stock
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Infineon Technologies | MOSFET N-CH 40V 120A TO220 | TO-220-3 | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 40V | 120A (Tc) | 3.3 mOhm @ 70A, 10V | 3.9V @ 100µA | 93nC @ 10V | 3183pF @ 25V | 6V, 10V | ±20V | 99W (Tc) | ||||
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1,223
In-stock
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Infineon Technologies | MOSFET N CH 40V 120A TO220AB | TO-220-3 | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | - | Not For New Designs | TO-220AB | 0 | 1 | N-Channel | - | 40V | 120A (Tc) | 3.3 mOhm @ 70A, 10V | 3.9V @ 100µA | 93nC @ 10V | 3183pF @ 25V | 6V, 10V | ±20V | 99W (Tc) | ||||
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2,589
In-stock
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Infineon Technologies | MOSFET N-CH 40V 100A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 40V | 100A (Tc) | 9 mOhm @ 60A, 10V | 4V @ 250µA | 93nC @ 10V | 2900pF @ 25V | 10V | ±20V | 170W (Tc) |