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Package / Case :
Minimum Quantity :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$2.216
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RFQ
Infineon Technologies MOSFET N-CH 40V 202A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1000 N-Channel - 40V 160A (Tc) 4 mOhm @ 121A, 10V 4V @ 250µA 196nC @ 10V 5669pF @ 25V 10V ±20V 333W (Tc)
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Per Unit
$0.983
RFQ
10,000
In-stock
Infineon Technologies MOSFET N-CH 40V 180A 2WDSON 3-WDSON OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Active MG-WDSON-2, CanPAK M™ 0 5000 N-Channel - 40V 36A (Ta), 180A (Tc) 1.4 mOhm @ 30A, 10V 2V @ 250µA 196nC @ 10V 16900pF @ 20V 4.5V, 10V ±20V 2.8W (Ta), 89W (Tc)
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