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Supplier Device Package :
Minimum Quantity :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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STMicroelectronics MOSFET N-CH 40V 120A H2PAK-2 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB DeepGATE™, STripFET™ VI Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete H2PAK-2 0 1000 N-Channel 40V 120A (Tc) 2.2 mOhm @ 60A, 10V 1V @ 250µA (Min) 181nC @ 10V 8130pF @ 20V 5V, 10V ±20V 150W (Tc)
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$0.476
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RFQ
STMicroelectronics MOSFET P-CH 40V 7A POWER8-SO 8-SOIC (0.154", 3.90mm Width) STripFET™ F6 Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount 150°C (TJ) Active 8-SO 0 2500 P-Channel 40V - 20.5 mOhm @ 3.5A, 10V 1V @ 250µA (Min) 22nC @ 4.5V 2850pF @ 25V 4.5V, 10V ±20V 2.7W (Ta)
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