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Supplier Device Package :
Minimum Quantity :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 40V 59A D2PAK-5 TO-263-6, D²Pak (5 Leads + Tab), TO-263BA HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete TO-263-5 0 800 N-Channel - 40V 59A (Tc) 18 mOhm @ 35A, 10V 2V @ 250µA 50nC @ 5V 2190pF @ 25V 5V, 10V ±10V 130W (Tc)
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$0.888
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STMicroelectronics N-CHANNEL 40 V, 3.8 MOHM TYP., 1 TO-252-3, DPak (2 Leads + Tab), SC-63 STripFET™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active DPAK 0 2500 N-Channel - 40V 80A (Tc) 2.8 mOhm @ 40A, 10V 4.5V @ 250µA 130nC @ 10V 7735pF @ 25V 10V ±20V 130W (Tc)
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