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Supplier Device Package :
Minimum Quantity :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 40V 104A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 3000 N-Channel - 40V 104A (Tc) 8 mOhm @ 62A, 10V 1V @ 250µA 68nC @ 4.5V 3445pF @ 25V 4.5V, 10V ±16V 167W (Tc)
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RFQ
Infineon Technologies MOSFET N-CH 40V 104A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 50 N-Channel - 40V 104A (Tc) 8 mOhm @ 62A, 10V 1V @ 250µA 68nC @ 4.5V 3445pF @ 25V 4.5V, 10V ±16V 167W (Tc)
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Per Unit
$2.220
RFQ
161
In-stock
Infineon Technologies MOSFET N-CH 40V 90A TO220-3 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active PG-TO-220-3 0 1 N-Channel - 40V 90A (Tc) 2.3 mOhm @ 90A, 10V 4V @ 95µA 120nC @ 10V 10000pF @ 20V 10V ±20V 167W (Tc)
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