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- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N CH 40V 85A PQFN 5X6 | 8-PowerTDFN | HEXFET®, StrongIRFET™ | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 1 | N-Channel | - | 40V | 85A (Tc) | 3.3 mOhm @ 50A, 10V | 3.9V @ 100µA | 98nC @ 10V | 3174pF @ 25V | 6V, 10V | ±20V | 78W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N CH 40V 100A PQFN5X6 | 8-VQFN Exposed Pad | HEXFET®, StrongIRFET™ | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 1 | N-Channel | - | 40V | 100A (Tc) | 1.4 mOhm @ 100A, 10V | 3.9V @ 150µA | 194nC @ 10V | 6419pF @ 25V | 6V, 10V | ±20V | 156W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 26A 8PQFN | 8-PowerTDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 1 | N-Channel | - | 40V | 26A (Ta), 85A (Tc) | 3.3 mOhm @ 50A, 10V | 2.5V @ 100µA | 58nC @ 4.5V | 3720pF @ 25V | 4.5V, 10V | ±16V | 3.6W (Ta), 104W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 22A PQFN | 8-VQFN Exposed Pad | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PQFN (5x6) | 0 | 1 | N-Channel | - | 40V | 22A (Ta), 100A (Tc) | 4.3 mOhm @ 50A, 10V | 4V @ 100µA | 65nC @ 10V | 2460pF @ 25V | 10V | ±20V | 3.6W (Ta), 105W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 100A 5X6 PQFN | 8-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 1 | N-Channel | - | 40V | 29A (Ta), 100A (Tc) | 2.4 mOhm @ 50A, 10V | 2.5V @ 150µA | 82nC @ 10V | 4730pF @ 25V | 4.5V, 10V | ±16V | 3.6W (Ta), 156W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 28A 8VQFN | 8-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 1 | N-Channel | - | 40V | 28A (Ta), 100A (Tc) | 2.6 mOhm @ 50A, 10V | 4V @ 150µA | 110nC @ 10V | 4490pF @ 20V | 10V | ±20V | 3.6W (Ta), 156W (Tc) | ||||
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VIEW | onsemi | MOSFET 2N-CH 40V 3.4A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SOIC | 0 | 1 | 2 N-Channel (Dual) | 1.39W | Logic Level Gate | 40V | 3.4A | 80 mOhm @ 3.4A, 10V | 3V @ 250µA | 28nC @ 10V | 900pF @ 32V |
