- Series :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
11 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 40V 19A DIRECTFET | DirectFET™ Isometric MX | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | DIRECTFET™ MX | 0 | 1000 | N-Channel | - | 40V | 19A (Ta), 106A (Tc) | 5 mOhm @ 19A, 10V | 2.25V @ 250µA | 44nC @ 4.5V | 3765pF @ 20V | 4.5V, 10V | ±20V | 2.8W (Ta), 89W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 12.7A DIRECTFET | DirectFET™ Isometric ST | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | DIRECTFET™ ST | 0 | 1000 | N-Channel | - | 40V | 12.7A (Ta), 55A (Tc) | 8.3 mOhm @ 12.7A, 10V | 2.25V @ 250µA | 29nC @ 4.5V | 2560pF @ 20V | 4.5V, 10V | ±20V | 2.1W (Ta), 42W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 40V DIRECTFET-ST | DirectFET™ Isometric ST | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | DIRECTFET™ ST | 0 | 1000 | N-Channel | - | 40V | 12.7A (Ta), 55A (Tc) | 8.3 mOhm @ 12.7A, 10V | 2.25V @ 250µA | 29nC @ 4.5V | 2560pF @ 20V | 4.5V, 10V | ±20V | 2.1W (Ta), 42W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 40V DIRECTFET-ST | DirectFET™ Isometric ST | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | DIRECTFET™ ST | 0 | 4800 | N-Channel | - | 40V | 12.7A (Ta), 55A (Tc) | 8.3 mOhm @ 12.7A, 10V | 2.25V @ 250µA | 29nC @ 4.5V | 2560pF @ 20V | 4.5V, 10V | ±20V | 2.1W (Ta), 42W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 23A DIRECTFET | DirectFET™ Isometric MT | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | DIRECTFET™ MT | 0 | 1000 | N-Channel | - | 40V | 23A (Ta), 150A (Tc) | 3.4 mOhm @ 23A, 10V | 2.25V @ 250µA | 63nC @ 4.5V | 5950pF @ 15V | 4.5V, 10V | ±20V | 2.8W (Ta), 89W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 23A DIRECTFET | DirectFET™ Isometric MT | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | DIRECTFET™ MT | 0 | 1000 | N-Channel | - | 40V | 23A (Ta), 150A (Tc) | 3.4 mOhm @ 23A, 10V | 2.25V @ 250µA | 63nC @ 4.5V | 5950pF @ 15V | 4.5V, 10V | ±20V | 2.8W (Ta), 89W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 180A 2WDSON | 3-WDSON | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | MG-WDSON-2, CanPAK M™ | 0 | 5000 | N-Channel | - | 40V | 36A (Ta), 180A (Tc) | 1.5 mOhm @ 30A, 10V | 4V @ 250µA | 142nC @ 10V | 12000pF @ 20V | 10V | ±20V | 2.8W (Ta), 89W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 23A DIRECTFET | DirectFET™ Isometric MT | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | DIRECTFET™ MT | 0 | 4800 | N-Channel | - | 40V | 23A (Ta), 150A (Tc) | 3.4 mOhm @ 23A, 10V | 2.25V @ 250µA | 63nC @ 4.5V | 5950pF @ 15V | 4.5V, 10V | ±20V | 2.8W (Ta), 89W (Tc) | |||
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48,000
In-stock
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Infineon Technologies | MOSFET N-CH 40V 12.7A DIRECTFET | DirectFET™ Isometric ST | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | DIRECTFET™ ST | 0 | 4800 | N-Channel | - | 40V | 12.7A (Ta), 55A (Tc) | 8.3 mOhm @ 12.7A, 10V | 2.25V @ 250µA | 29nC @ 4.5V | 2560pF @ 20V | 4.5V, 10V | ±20V | 2.1W (Ta), 42W (Tc) | |||
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10,000
In-stock
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Infineon Technologies | MOSFET N-CH 40V 180A 2WDSON | 3-WDSON | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | MG-WDSON-2, CanPAK M™ | 0 | 5000 | N-Channel | - | 40V | 36A (Ta), 180A (Tc) | 1.4 mOhm @ 30A, 10V | 2V @ 250µA | 196nC @ 10V | 16900pF @ 20V | 4.5V, 10V | ±20V | 2.8W (Ta), 89W (Tc) | |||
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4,800
In-stock
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Infineon Technologies | MOSFET N-CH 40V 19A DIRECTFET | DirectFET™ Isometric MX | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | DIRECTFET™ MX | 0 | 4800 | N-Channel | - | 40V | 19A (Ta), 106A (Tc) | 5 mOhm @ 19A, 10V | 2.25V @ 250µA | 44nC @ 4.5V | 3765pF @ 20V | 4.5V, 10V | ±20V | 2.8W (Ta), 89W (Tc) |
