- Package / Case :
- Series :
- Mounting Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 40V 195A TO-262 | TO-262-3 Short Leads, I²Pak | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1000 | N-Channel | - | 40V | 195A (Tc) | 1.2 mOhm @ 100A, 10V | 3.9V @ 250µA | 450nC @ 10V | 14240pF @ 25V | 10V | ±20V | 375W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 160A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1000 | N-Channel | - | 40V | 160A (Tc) | 3.1 mOhm @ 75A, 10V | 2.7V @ 250µA | 110nC @ 5V | 5080pF @ 25V | 4.5V, 10V | ±16V | 200W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 195A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1000 | N-Channel | - | 40V | 195A (Tc) | 1.6 mOhm @ 100A, 10V | 3.9V @ 250µA | 324nC @ 10V | 10820pF @ 25V | 6V, 10V | ±20V | 294W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 195A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1000 | N-Channel | - | 40V | 195A (Tc) | 2 mOhm @ 100A, 10V | 4V @ 150µA | 225nC @ 10V | 7330pF @ 25V | 10V | ±20V | 230W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 75A TO-220-3 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1000 | N-Channel | - | 40V | 75A (Tc) | 2.3 mOhm @ 75A, 10V | 4V @ 250µA | 240nC @ 10V | 6450pF @ 25V | - | - | 300W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 160A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1000 | N-Channel | - | 40V | 160A (Tc) | 3.7 mOhm @ 75A, 10V | 4V @ 250µA | 150nC @ 10V | 4340pF @ 25V | 10V | ±20V | 200W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 120A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1000 | N-Channel | - | 40V | 120A (Tc) | 2.3 mOhm @ 100A, 10V | 3.9V @ 100µA | 161nC @ 10V | 5193pF @ 25V | 10V | ±20V | 163W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 123A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1000 | N-Channel | - | 40V | 123A (Tc) | 3.3 mOhm @ 70A, 10V | 3.9V @ 100µA | 93nC @ 10V | 3183pF @ 25V | 10V | ±20V | 99W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N CH 40V 120A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1000 | N-Channel | - | 40V | 120A (Tc) | 2.5 mOhm @ 100A, 10V | 3.9V @ 100µA | 135nC @ 10V | 4730pF @ 25V | 6V, 10V | ±20V | 208W (Tc) | ||||
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320
In-stock
|
Infineon Technologies | MOSFET N CH 40V 195A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 40V | 195A (Tc) | 1.8 mOhm @ 100A, 10V | 3.9V @ 150µA | 225nC @ 10V | 7330pF @ 25V | 6V, 10V | ±20V | 230W (Tc) | ||||
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236
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 195A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 40V | 195A (Tc) | 2 mOhm @ 75A, 10V | 4V @ 250µA | 240nC @ 10V | 6450pF @ 25V | 10V | ±20V | 300W (Tc) | ||||
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2,048
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 162A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 40V | 162A (Tc) | 4 mOhm @ 95A, 10V | 4V @ 250µA | 200nC @ 10V | 7360pF @ 25V | 10V | ±20V | 3.8W (Ta), 200W (Tc) |