Build a global manufacturer and supplier trusted trading platform.
Minimum Quantity :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
065N04N
Per Unit
$1.500
RFQ
46,000
In-stock
Infineon Technologies MOSFET N-CH 40V 50A TO220-3 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO-220-3 0 500 N-Channel - 40V 50A (Tc) 6.5 mOhm @ 50A, 10V 4V @ 200µA 34nC @ 10V 2800pF @ 20V 10V ±20V 68W (Tc)
Default Photo
Per Unit
$0.896
VIEW
RFQ
Infineon Technologies MOSFET N-CH 40V 70A TO220-3 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active PG-TO-220-3 0 500 N-Channel - 40V 70A (Tc) 4.8 mOhm @ 70A, 10V 4V @ 200µA 41nC @ 10V 3300pF @ 25V 10V ±20V 79W (Tc)
Default Photo
Per Unit
$2.220
RFQ
161
In-stock
Infineon Technologies MOSFET N-CH 40V 90A TO220-3 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active PG-TO-220-3 0 1 N-Channel - 40V 90A (Tc) 2.3 mOhm @ 90A, 10V 4V @ 95µA 120nC @ 10V 10000pF @ 20V 10V ±20V 167W (Tc)
Page 1 / 1