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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N CH 40V 120A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET®, StrongIRFET™ Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) TO-263 (D²Pak) 0 450 N-Channel - 40V 120A (Tc) 2.5 mOhm @ 100A, 10V 3.9V @ 100µA 135nC @ 10V 4730pF @ 25V 6V, 10V ±20V 208W (Tc)
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Infineon Technologies MOSFET N-CH 40V 42A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D-PAK (TO-252AA) 0 450 N-Channel - 40V 42A (Tc) 4.9 mOhm @ 42A, 10V 2.5V @ 100µA 56nC @ 4.5V 3810pF @ 25V 4.5V, 10V ±16V 140W (Tc)
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Infineon Technologies MOSFET N-CH 40V 42A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D-PAK 0 450 N-Channel - 40V 42A (Tc) 5.5 mOhm @ 42A, 10V 4V @ 250µA 89nC @ 10V 2950pF @ 25V 10V ±20V 140W (Tc)
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Infineon Technologies MOSFET N-CH 40V 42A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete IPAK (TO-251) 0 450 N-Channel - 40V 42A (Tc) 5.5 mOhm @ 42A, 10V 4V @ 250µA 89nC @ 10V 2950pF @ 25V 10V ±20V 140W (Tc)
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