- Package / Case :
- Series :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 40V 42A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | I-PAK | 0 | 3000 | N-Channel | - | 40V | 42A (Tc) | 5.5 mOhm @ 42A, 10V | 4V @ 250µA | 89nC @ 10V | 2950pF @ 25V | 10V | ±20V | 140W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 104A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220AB | 0 | 3000 | N-Channel | - | 40V | 104A (Tc) | 8 mOhm @ 62A, 10V | 1V @ 250µA | 68nC @ 4.5V | 3445pF @ 25V | 4.5V, 10V | ±16V | 167W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 120A | TO-220-3 | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 3000 | N-Channel | - | 40V | 120A (Tc) | 2.7 mOhm @ 98A, 10V | 2.4V @ 100µA | 84nC @ 4.5V | 5225pF @ 25V | 4.5V, 10V | ±20V | 143W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 100A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | I-PAK | 0 | 3000 | N-Channel | - | 40V | 100A (Tc) | 1.98 mOhm @ 90A, 10V | 3.9V @ 100µA | 155nC @ 10V | 5171pF @ 25V | 10V | ±20V | 163W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 100A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | I-PAK | 0 | 3000 | N-Channel | - | 40V | 100A (Tc) | 3.1 mOhm @ 76A, 10V | 3.9V @ 100µA | 99nC @ 10V | 3171pF @ 25V | 10V | ±20V | 99W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 100A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | I-PAK | 0 | 3000 | N-Channel | - | 40V | 100A (Tc) | 4.25 mOhm @ 60A, 10V | 3.9V @ 500µA | 63nC @ 10V | 2200pF @ 25V | 10V | ±20V | 79W (Tc) |