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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 40V 42A D2PAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D-PAK (TO-252AA) 0 400 N-Channel - 40V 56A (Tc) 4.9 mOhm @ 56A, 10V 2.5V @ 100µA 53nC @ 4.5V 3617pF @ 25V 10V ±16V 143W (Tc)
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Infineon Technologies MOSFET P-CH 40V 74A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 400 P-Channel - 40V 56A (Ta) 16 mOhm @ 37A, 10V 3V @ 100µA 224nC @ 10V 7676pF @ 25V 4.5V, 10V ±20V 143W (Tc)
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$4.938
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Infineon Technologies MOSFET N-CH 40V 350A TO-247AC TO-247-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-247AC 0 400 N-Channel - 40V 195A (Tc) 1.7 mOhm @ 195A, 10V 4V @ 250µA 330nC @ 10V 8920pF @ 25V 10V ±20V 380W (Tc)
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Infineon Technologies MOSFET N-CH 40V 24A PQFN 8-VQFN Exposed Pad HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PQFN (5x6) 0 400 N-Channel - 40V 24A (Ta), 100A (Tc) 3.5 mOhm @ 50A, 10V 4V @ 100µA 80nC @ 10V 3120pF @ 25V 10V ±20V 3.6W (Ta), 114W (Tc)
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