- Manufacture :
- Packaging :
- Mounting Type :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 6PQFN | 6-VDFN Exposed Pad | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | 6-PQFN (2x2) | 0 | 4000 | N-Channel | 100V | 11A (Tc) | 42 mOhm @ 6.7A, 10V | 2.3V @ 10µA | 5.6nC @ 4.5V | 440pF @ 50V | 4.5V, 10V | ±20V | 11.5W (Tc) | |||
|
|
|
7,896
In-stock
|
onsemi | MOSFET N-CH 60V 11A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-251AA | 46800 | 1 | N-Channel | 60V | 11A (Tc) | 107 mOhm @ 8A, 5V | 3V @ 250µA | 11.3nC @ 10V | 350pF @ 25V | 5V | ±16V | 38W (Tc) | |||
|
|
|
10,000
In-stock
|
onsemi | MOSFET N-CH 60V 11A TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-252AA | 0 | 2500 | N-Channel | 60V | 11A (Tc) | 107 mOhm @ 8A, 5V | 3V @ 250µA | 11.3nC @ 10V | 350pF @ 25V | 5V | ±16V | 38W (Tc) |
