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11 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 55V 26A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 175°C (TJ) Obsolete D-PAK 0 2000 N-Channel - 55V 26A (Tc) 50 mOhm @ 4.7A, 10V 1V @ 250µA 42nC @ 10V 740pF @ 50V 4.5V, 10V ±20V 79W (Tc)
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Infineon Technologies MOSFET N-CH 55V 26A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 175°C (TJ) Obsolete D-PAK 0 3000 N-Channel - 55V 26A (Tc) 50 mOhm @ 4.7A, 10V 1V @ 250µA 42nC @ 10V 740pF @ 50V 4.5V, 10V ±20V 79W (Tc)
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Infineon Technologies MOSFET N-CH 55V 26A DPAK TO-252-4, DPak (3 Leads + Tab) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -40°C ~ 175°C (TJ) Obsolete I-PAK (LF701) 0 600 N-Channel - 55V 26A (Tc) 50 mOhm @ 4.7A, 10V 1V @ 250µA 42nC @ 10V 740pF @ 50V 4.5V, 10V ±20V 79W (Tc)
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Infineon Technologies MOSFET N-CH 55V 26A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK 0 1125 N-Channel - 55V 26A (Tc) 50 mOhm @ 4.7A, 10V 1V @ 250µA 42nC @ 10V 740pF @ 50V 4.5V, 10V ±20V 79W (Tc)
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Infineon Technologies MOSFET N-CH 55V 26A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -40°C ~ 175°C (TJ) Obsolete D-PAK 0 6000 N-Channel - 55V 26A (Tc) 50 mOhm @ 4.7A, 10V 1V @ 250µA 42nC @ 10V 740pF @ 50V 4.5V, 10V ±20V 79W (Tc)
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Infineon Technologies MOSFET N-CH 55V 26A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 175°C (TJ) Obsolete D-PAK 0 3000 N-Channel - 55V 26A (Tc) 50 mOhm @ 4.7A, 10V 1V @ 250µA 42nC @ 10V 740pF @ 50V 4.5V, 10V ±20V 79W (Tc)
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Infineon Technologies MOSFET N-CH 55V 26A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK 0 75 N-Channel - 55V 26A (Tc) 50 mOhm @ 4.7A, 10V 1V @ 250µA 42nC @ 10V 740pF @ 50V 4.5V, 10V ±20V 79W (Tc)
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Infineon Technologies MOSFET N-CH 55V 26A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -40°C ~ 175°C (TJ) Obsolete D-PAK 0 75 N-Channel - 55V 26A (Tc) 50 mOhm @ 4.7A, 10V 1V @ 250µA 42nC @ 10V 740pF @ 50V 4.5V, 10V ±20V 79W (Tc)
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Infineon Technologies MOSFET N-CH 55V 26A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 175°C (TJ) Obsolete D-PAK 0 3000 N-Channel - 55V 26A (Tc) 50 mOhm @ 4.7A, 10V 1V @ 250µA 42nC @ 10V 740pF @ 50V 4.5V, 10V ±20V 79W (Tc)
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VIEW
RFQ
Infineon Technologies MOSFET N-CH 55V 26A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 175°C (TJ) Obsolete D-PAK 0 2000 N-Channel - 55V 26A (Tc) 50 mOhm @ 4.7A, 10V 1V @ 250µA 42nC @ 10V 740pF @ 50V 4.5V, 10V ±20V 79W (Tc)
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Per Unit
$3.300
RFQ
2,027
In-stock
Infineon Technologies MOSFET N-CH 200V 26A TO-220FP TO-220-3 Full Pack HEXFET® Tube MOSFET (Metal Oxide) Through Hole -40°C ~ 150°C (TJ) Active TO-220AB Full-Pak 0 1 N-Channel - 200V 26A (Tc) 25 mOhm @ 17A, 10V 5V @ 250µA 110nC @ 10V 4600pF @ 25V 10V ±30V 46W (Tc)
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