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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$4.280
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RFQ
Infineon Technologies MOSFET N-CH 600V 26A TO220-3 TO-220-3 CoolMOS™ P7 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO220-3 0 1 N-Channel - 600V 26A (Tc) 120 mOhm @ 8.2A, 10V 4V @ 410µA 36nC @ 10V 1544pF @ 400V 10V ±20V 95W (Tc)
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Per Unit
$1.670
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RFQ
STMicroelectronics MOSFET N-CH 100V 26A TO-220 TO-220-3 STripFET™ II Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1 N-Channel - 100V 26A (Tc) 60 mOhm @ 12A, 10V 4V @ 250µA 41nC @ 10V 870pF @ 25V 10V ±20V 85W (Tc)
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