- Manufacture :
- Operating Temperature :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
229
In-stock
|
Infineon Technologies | MOSFET N-CHANNEL 600V 26A TO220 | TO-220-3 Full Pack | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO220 Full Pack | 0 | 1 | N-Channel | - | 600V | 26A (Tc) | 120 mOhm @ 8.2A, 10V | 4V @ 410µA | 36nC @ 10V | 1544pF @ 400V | 10V | ±20V | 28W (Tc) | |||
|
|
|
612
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 26A TO220FP | TO-220-3 Full Pack | MDmesh™ II Plus | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220FP | 0 | 1 | N-Channel | - | 600V | 26A (Tc) | 125 mOhm @ 13A, 10V | 4V @ 250µA | 45.5nC @ 10V | 1781pF @ 100V | 10V | ±25V | 35W (Tc) | |||
|
|
|
2,027
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 26A TO-220FP | TO-220-3 Full Pack | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 150°C (TJ) | Active | TO-220AB Full-Pak | 0 | 1 | N-Channel | - | 200V | 26A (Tc) | 25 mOhm @ 17A, 10V | 5V @ 250µA | 110nC @ 10V | 4600pF @ 25V | 10V | ±30V | 46W (Tc) |
