- Manufacture :
- Packaging :
- Mounting Type :
- Supplier Device Package :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 60V 50A TDSON-8 | 8-PowerTDFN | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | 0 | 5000 | N-Channel | - | 60V | 50A (Tc) | 7.6 mOhm @ 50A, 10V | 4V @ 35µA | 50nC @ 10V | 4000pF @ 30V | 10V | ±20V | 2.5W (Ta), 69W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 50A TDSON-8 | 8-PowerTDFN | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | 0 | 5000 | N-Channel | - | 60V | 50A (Tc) | 11 mOhm @ 50A, 10V | 4V @ 23µA | 33nC @ 10V | 2700pF @ 30V | 10V | ±20V | 2.5W (Ta), 50W (Tc) | |||
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VIEW | STMicroelectronics | MOSFET P-CH 40V 50A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | Automotive, AEC-Q101, STripFET™ F6 | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | DPAK | 0 | 2500 | P-Channel | - | 40V | 50A (Tc) | 15 mOhm @ 25A, 10V | 2.5V @ 250µA | 65.5nC @ 10V | 3525pF @ 25V | 4.5V, 10V | ±18V | 58W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 650V 50A TO263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | CoolMOS™ C7 | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TO263-3 | 0 | 1000 | N-Channel | - | 650V | 50A (Tc) | 40 mOhm @ 24.9A, 10V | 4V @ 1.24mA | 107nC @ 10V | 4340pF @ 400V | 10V | ±20V | 227W (Tc) | |||
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122
In-stock
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Infineon Technologies | HIGH POWER_NEW | TO-247-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO247-3 | 0 | 1 | N-Channel | - | 600V | 50A (Tc) | 40 mOhm @ 24.9A, 10V | 4.5V @ 1.25mA | 109nC @ 10V | 4354pF @ 400V | 10V | ±20V | 227W (Tc) | |||
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215
In-stock
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Infineon Technologies | MOSFET N-CH 600V 50A TO247-4 | TO-247-4 | CoolMOS™ C7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO247-4 | 0 | 1 | N-Channel | - | 600V | 50A (Tc) | 40 mOhm @ 24.9A, 10V | 4V @ 1.24mA | 107nC @ 10V | 4340pF @ 400V | 10V | ±20V | 227W (Tc) | |||
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127
In-stock
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Infineon Technologies | MOSFET N-CH 600V 50A TO220-3 | TO-220-3 | CoolMOS™ C7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO220-3-1 | 0 | 1 | N-Channel | - | 600V | 50A (Tc) | 40 mOhm @ 24.9A, 10V | 4V @ 1.24mA | 107nC @ 10V | 4340pF @ 400V | 10V | ±20V | 227W (Tc) | |||
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588
In-stock
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STMicroelectronics | MOSFET N-CH 600V 50A | TO-247-3 | Automotive, AEC-Q101, MDmesh™ DM2 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 | 0 | 1 | N-Channel | - | 600V | 50A (Tc) | 60 mOhm @ 25A, 10V | 5V @ 250µA | 90nC @ 10V | 4100pF @ 100V | 10V | ±25V | 360W (Tc) | |||
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576
In-stock
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Infineon Technologies | MOSFET N-CH 600V 50A TO247-3 | TO-247-3 | CoolMOS™ C7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO247-3 | 0 | 1 | N-Channel | - | 600V | 50A (Tc) | 40 mOhm @ 24.9A, 10V | 4V @ 1.24mA | 107nC @ 10V | 4340pF @ 400V | 10V | ±20V | 227W (Tc) |
