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Minimum Quantity :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 20V 50A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 600 N-Channel - 20V 50A (Tc) 11 mOhm @ 15A, 10V 2.55V @ 250µA 11nC @ 4.5V 870pF @ 10V 4.5V, 10V ±20V 45W (Tc)
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RFQ
Infineon Technologies MOSFET N-CH 20V 50A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 50 N-Channel - 20V 50A (Tc) 11 mOhm @ 15A, 10V 2.55V @ 250µA 11nC @ 4.5V 870pF @ 10V 4.5V, 10V ±20V 45W (Tc)
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Per Unit
$2.510
RFQ
696
In-stock
STMicroelectronics MOSFET N-CH 100V 50A TO-220 TO-220-3 STripFET™ II Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1 N-Channel - 100V 50A (Tc) 28 mOhm @ 25A, 10V 4V @ 250µA 62nC @ 10V 2180pF @ 25V 10V ±20V 150W (Tc)
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