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Minimum Quantity :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock @ qty Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 60V 28A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 0 3000 N-Channel - 60V 28A (Tc) 42 mOhm @ 17A, 10V 4V @ 250µA 30nC @ 10V 680pF @ 25V 10V ±20V 68W (Tc)
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Infineon Technologies MOSFET N-CH 60V 28A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 0 50 N-Channel - 60V 28A (Tc) 42 mOhm @ 17A, 10V 4V @ 250µA 30nC @ 10V 680pF @ 25V 10V ±20V 68W (Tc)
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Per Unit
$2.460
RFQ
28,183
In-stock
onsemi MOSFET N-CH 200V 28A TO-220 TO-220-3 QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220AB 166000 0 1 N-Channel - 200V 28A (Tc) 82 mOhm @ 14A, 10V 4V @ 250µA 110nC @ 10V 2200pF @ 25V 10V ±30V 156W (Tc)
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