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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 80V 55A DIRECTFET-MZ DirectFET™ Isometric MZ HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete DIRECTFET™ MZ 0 1000 N-Channel - 80V 55A (Tc) 15 mOhm @ 12A, 10V 4.9V @ 100µA 31nC @ 10V 1320pF @ 25V 10V ±20V 2.8W (Ta), 89W (Tc)
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Infineon Technologies MOSFET N-CH 80V 55A DIRECTFET DirectFET™ Isometric MZ HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete DIRECTFET™ MZ 0 1000 N-Channel - 80V 55A (Tc) 15 mOhm @ 12A, 10V 4.9V @ 100µA 31nC @ 10V 1320pF @ 25V 10V ±20V 2.8W (Ta), 89W (Tc)
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Infineon Technologies MOSFET N-CH 100V 55A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D2PAK 0 1000 N-Channel - 100V 55A (Tc) 26 mOhm @ 29A, 10V 2V @ 250µA 140nC @ 5V 3700pF @ 25V 4V, 10V ±16V 3.8W (Ta), 200W (Tc)
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$1.043
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STMicroelectronics MOSFET N-CH 60V 55A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB STripFET™ II Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D2PAK 0 1000 N-Channel - 60V 55A (Tc) 18 mOhm @ 27.5A, 10V 4.7V @ 250µA 37nC @ 4.5V 1700pF @ 25V 10V, 5V ±16V 95W (Tc)
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