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Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$4.870
VIEW
RFQ
STMicroelectronics NCHANNEL 600 V 105 MOHM TYP. 26 TO-220-3 MDmesh™ M6 - MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220 0 1 N-Channel - 600V 25A (Tc) 125 mOhm @ 12.5A, 10V 4.75V @ 250µA 33.4nC @ 10V 1515pF @ 100V 10V ±25V 190W (Tc)
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Per Unit
$2.060
RFQ
359
In-stock
STMicroelectronics MOSFET N-CH 100V 25A TO-220 TO-220-3 DeepGATE™, STripFET™ VII Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220 0 1 N-Channel - 100V 25A (Tc) 35 mOhm @ 12.5A, 10V 4.5V @ 250µA 14nC @ 10V 920pF @ 50V 10V ±20V 50W (Tc)
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