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- Operating Temperature :
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- Supplier Device Package :
- Gate Charge (Qg) (Max) @ Vgs :
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8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 55V 25A TO-220 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | PG-TO220-3-1 | 0 | 500 | N-Channel | - | 55V | 25A (Tc) | 21.6 mOhm @ 17A, 10V | 2.2V @ 20µA | 47nC @ 10V | 2260pF @ 25V | 5V, 10V | ±16V | 50W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 25A TO-220 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | PG-TO220-3-1 | 0 | 500 | N-Channel | - | 55V | 25A (Tc) | 25.1 mOhm @ 15A, 10V | 4V @ 20µA | 41nC @ 10V | 1862pF @ 25V | 10V | ±20V | 48W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 650V 25A TO-220 | TO-220-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO-220-3 | 0 | 1 | N-Channel | - | 650V | 25A (Tc) | 125 mOhm @ 16A, 10V | 3.5V @ 1.1mA | 70nC @ 10V | 2500pF @ 100V | 10V | ±20V | 208W (Tc) | |||
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VIEW | STMicroelectronics | NCHANNEL 600 V 105 MOHM TYP. 26 | TO-220-3 | MDmesh™ M6 | - | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220 | 0 | 1 | N-Channel | - | 600V | 25A (Tc) | 125 mOhm @ 12.5A, 10V | 4.75V @ 250µA | 33.4nC @ 10V | 1515pF @ 100V | 10V | ±25V | 190W (Tc) | |||
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157
In-stock
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Infineon Technologies | MOSFET N-CH 200V 25A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 200V | 25A (Tc) | 72.5 mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | 10V | ±20V | 144W (Tc) | |||
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359
In-stock
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STMicroelectronics | MOSFET N-CH 100V 25A TO-220 | TO-220-3 | DeepGATE™, STripFET™ VII | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220 | 0 | 1 | N-Channel | - | 100V | 25A (Tc) | 35 mOhm @ 12.5A, 10V | 4.5V @ 250µA | 14nC @ 10V | 920pF @ 50V | 10V | ±20V | 50W (Tc) | |||
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468
In-stock
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Infineon Technologies | HIGH POWER_NEW | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO220-3 | 0 | 1 | N-Channel | - | 600V | 25A (Tc) | 90 mOhm @ 11.4A, 10V | 4.5V @ 570µA | 51nC @ 10V | 2103pF @ 400V | 10V | ±20V | 125W (Tc) | |||
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1,280
In-stock
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Infineon Technologies | MOSFET N-CH 250V 25A TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO220-3-1 | 0 | 1 | N-Channel | - | 250V | 25A (Tc) | 60 mOhm @ 25A, 10V | 4V @ 90µA | 29nC @ 10V | 2350pF @ 100V | 10V | ±20V | 136W (Tc) |
