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Part Status :
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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RFQ
Infineon Technologies MOSFET N-CH 55V 25A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D-PAK 0 3000 N-Channel - 55V 25A (Tc) 37 mOhm @ 15A, 10V 3V @ 250µA 20nC @ 5V 710pF @ 25V 5V, 10V ±16V 57W (Tc)
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Per Unit
$0.191
RFQ
3,000
In-stock
Texas instruments 30V N CH MOSFET 6-WDFN Exposed Pad NexFET™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 6-WSON (2x2) 0 3000 N-Channel - 30V 25A (Tc) 15.1 mOhm @ 8A, 8V 1.2V @ 250µA 6nC @ 4.5V 879pF @ 15V 2.5V, 8V ±10V 16W (Tc)
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