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Supplier Device Package :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
STW10NK80Z
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RFQ
12,500
In-stock
STMicroelectronics MOSFET N-CH 800V 9A TO-247 TO-247-3 SuperMESH™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247-3 0 1 N-Channel - 800V 9A (Tc) 900 mOhm @ 4.5A, 10V 4.5V @ 100µA 72nC @ 10V 2180pF @ 25V 10V ±30V 160W (Tc)
P10NK80Z
5+
$1.500
50+
$1.300
RFQ
17,300
In-stock
STMicroelectronics MOSFET N-CH 800V 9A TO-220 TO-220-3 SuperMESH™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220AB 0 1 N-Channel - 800V 9A (Tc) 900 mOhm @ 4.5A, 10V 4.5V @ 100µA 72nC @ 10V 2180pF @ 25V 10V ±30V 190W (Tc)
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