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Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$1.880
VIEW
RFQ
Infineon Technologies MOSFET N-CHANNEL 650V 9A TO220 TO-220-3 Full Pack CoolMOS™ P7 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO220 Full Pack 0 1 N-Channel - 650V 9A (Tc) 360 mOhm @ 2.7A, 10V 4V @ 140µA 13nC @ 10V 555pF @ 400V 10V ±20V 22W (Tc)
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Per Unit
$1.350
VIEW
RFQ
Infineon Technologies MOSFET N-CHANNEL 600V 9A TO220 TO-220-3 Full Pack CoolMOS™ P7 Tube MOSFET (Metal Oxide) Through Hole -40°C ~ 150°C (TJ) Active PG-TO220 Full Pack 0 1 N-Channel - 600V 9A (Tc) 360 mOhm @ 2.7A, 10V 4V @ 140µA 13nC @ 10V 555pF @ 400V 10V ±20V 22W (Tc)
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Per Unit
$2.430
RFQ
480
In-stock
Infineon Technologies MOSFET N-CH 950V 9A TO252 TO-220-3 Full Pack CoolMOS™ P7 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO220 Full Pack 0 1 N-Channel - 950V 9A (Tc) 750 mOhm @ 4.5A, 10V 3.5V @ 220µA 23nC @ 10V 712pF @ 400V 10V ±20V 28W (Tc)
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Per Unit
$1.290
RFQ
336
In-stock
Infineon Technologies MOSFET N-CHANNEL 650V 9A TO220 TO-220-3 Full Pack CoolMOS™ P7 Tube MOSFET (Metal Oxide) Through Hole -40°C ~ 150°C (TJ) Active PG-TO220 Full Pack 0 1 N-Channel - 650V 9A (Tc) 360 mOhm @ 2.7A, 10V 4V @ 140µA 13nC @ 10V 555pF @ 400V 10V ±30V 22W (Tc)
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