- Manufacture :
- Packaging :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 24V 429A D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK (7-Lead) | 0 | 200 | N-Channel | - | 24V | 240A (Tc) | 1 mOhm @ 160A, 10V | 4V @ 250µA | 252nC @ 10V | 7700pF @ 19V | 10V | ±20V | 300W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 40V 295A TO262WL | TO-262-3 Wide Leads | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262-3 Wide | 0 | 150 | N-Channel | - | 40V | 240A (Tc) | 1.8 mOhm @ 187A, 10V | 4V @ 250µA | 225nC @ 10V | 7978pF @ 25V | 10V | ±20V | 300W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) | Automotive, AEC-Q101, OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO263-7-3 | 0 | 1000 | N-Channel | - | 40V | 240A (Tc) | 0.87 mOhm @ 100A, 10V | 4V @ 230µA | 290nC @ 10V | 23000pF @ 25V | 10V | ±20V | 300W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) | Automotive, AEC-Q101, OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO263-7-3 | 0 | 1000 | N-Channel | - | 30V | 240A (Tc) | 0.76 mOhm @ 100A, 10V | 2.2V @ 230µA | 380nC @ 10V | 26000pF @ 25V | 4.5V, 10V | ±16V | 300W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 24V 429A D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK (7-Lead) | 0 | 800 | N-Channel | - | 24V | 240A (Tc) | 1 mOhm @ 160A, 10V | 4V @ 250µA | 252nC @ 10V | 7700pF @ 19V | 10V | ±20V | 300W (Tc) | |||
|
|
|
VIEW | STMicroelectronics | MOSFET N-CH 75V 240A POWERSO-10 | PowerSO-10 Exposed Bottom Pad | STripFET™ III | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | 10-PowerSO | 0 | 600 | N-Channel | - | 75V | 240A (Tc) | 2.6 mOhm @ 120A, 10V | 4V @ 250µA | 100nC @ 10V | 6800pF @ 25V | 10V | ±20V | 300W (Tc) | |||
|
|
|
160
In-stock
|
Infineon Technologies | MOSFET N-CH 24V 240A TO-262 | TO-262-3 Wide Leads | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262-3 Wide | 0 | 1 | N-Channel | - | 24V | 240A (Tc) | 1.3 mOhm @ 195A, 10V | 4V @ 250µA | 180nC @ 10V | 7630pF @ 19V | 10V | ±20V | 300W (Tc) |
