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- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 90A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 3000 | N-Channel | - | 30V | 90A (Tc) | 4.5 mOhm @ 40A, 10V | 2.25V @ 250µA | 29nC @ 4.5V | 2660pF @ 15V | 4.5V, 10V | ±20V | 115W (Tc) | ||||
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VIEW | STMicroelectronics | MOSFET N-CH 30V 80A TO-220 | TO-220-3 | STripFET™ II | Tube | MOSFET (Metal Oxide) | Through Hole | 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 30V | 80A (Tc) | 4.5 mOhm @ 40A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 5500pF @ 25V | 4.5V, 10V | ±20V | 300W (Tc) | ||||
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VIEW | STMicroelectronics | MOSFET N-CH 25V 80A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | STripFET™ V | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | DPAK | 0 | 2500 | N-Channel | - | 25V | 80A (Tc) | 4.5 mOhm @ 40A, 10V | 1V @ 250µA | 13.4nC @ 5V | 1817pF @ 25V | 5V, 10V | ±22V | 70W (Tc) | ||||
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VIEW | onsemi | MOSFET 2N-CH 60V 60A EPM15 | EPM15 | Power-SPM™ | Tube | Through Hole | -40°C ~ 150°C (TJ) | Obsolete | EPM15 | 0 | 475 | 2 N-Channel (Dual) | - | Standard | 60V | 60A | 4.5 mOhm @ 40A, 10V | 4V @ 250µA | 87nC @ 10V | 3890pF @ 25V |
