- Manufacture :
- Package / Case :
-
- 8-SOIC (0.154", 3.90mm Width) (3)
- TO-220-3 (16)
- TO-226-3, TO-92-3 (TO-226AA) (1)
- TO-247-3 (1)
- TO-251-3 Short Leads, IPak, TO-251AA (1)
- TO-251-3 Stub Leads, IPak (1)
- TO-252-3, DPak (2 Leads + Tab), SC-63 (1)
- TO-262-3 Long Leads, I²Pak, TO-262AA (4)
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB (1)
- TO-263-7, D²Pak (6 Leads + Tab), TO-263CB (2)
- Packaging :
- Mounting Type :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- FET Type :
- Rds On (Max) @ Id, Vgs :
-
- 1.4 mOhm @ 200A, 10V (1)
- 1.7 mOhm @ 195A, 10V (3)
- 115 mOhm @ 5.5A, 10V (1)
- 13.5 mOhm @ 11A, 10V (1)
- 15 mOhm @ 30A, 10V (1)
- 2 Ohm @ 500mA, 10V (1)
- 2.4 mOhm @ 165A, 10V (2)
- 28 mOhm @ 23A, 10V (1)
- 3 mOhm @ 38A, 10V (1)
- 3.2 mOhm @ 50A, 10V (1)
- 3.2 mOhm @ 60A, 10V (1)
- 3.3 mOhm @ 40A, 10V (1)
- 3.5 mOhm @ 40A, 10V (1)
- 3.7 mOhm @ 30A, 10V (1)
- 3.9 mOhm @ 110A, 10V (1)
- 33 mOhm @ 20A, 10V (1)
- 35 mOhm @ 16A, 10V (1)
- 4.3 mOhm @ 110A, 10V (2)
- 4.5 mOhm @ 40A, 10V (1)
- 40 mOhm @ 15A, 10V (1)
- 5.9 mOhm @ 37.5A, 10V (1)
- 6.5 mOhm @ 45A, 10V (1)
- 60 mOhm @ 5.3A, 10V (2)
- 8 mOhm @ 40A, 10V (2)
- Gate Charge (Qg) (Max) @ Vgs :
-
- 100nC @ 4.5V (1)
- 110nC @ 10V (1)
- 110nC @ 4.5V (2)
- 110nC @ 5V (1)
- 130nC @ 4.5V (2)
- 14.1nC @ 11.5V (1)
- 140nC @ 4.5V (3)
- 162nC @ 4.5V (3)
- 17nC @ 5V (1)
- 180nC @ 4.5V (1)
- 20nC @ 5V (1)
- 23.8nC @ 4.5V (1)
- 25nC @ 10V (2)
- 33nC @ 4.5V (1)
- 40nC @ 4.5V (1)
- 42nC @ 4.5V (2)
- 47nC @ 5V (1)
- 6.4nC @ 5V (1)
- 64nC @ 5V (1)
- 80nC @ 5V (1)
- 88nC @ 5V (1)
- Input Capacitance (Ciss) (Max) @ Vds :
-
- 10315pF @ 25V (3)
- 1040pF @ 25V (1)
- 10990pF @ 40V (1)
- 11210pF @ 50V (2)
- 11360pF @ 50V (2)
- 11490pF @ 50V (1)
- 1890pF @ 25V (1)
- 2030pF @ 25V (1)
- 2300pF @ 25V (1)
- 2700pF @ 25V (1)
- 3100pF @ 25V (1)
- 3500pF @ 25V (1)
- 350pF @ 25V (1)
- 4030pF @ 25V (1)
- 4040pF @ 25V (1)
- 4050pF @ 25V (1)
- 4350pF @ 25V (1)
- 50pF @ 25V (1)
- 5500pF @ 25V (1)
- 5890pF @ 15V (1)
- 6200pF @ 25V (2)
- 660pF @ 25V (1)
- 770pF @ 12V (1)
- 860pF @ 10V (2)
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
-
- 1.26W (Ta), 32.6W (Tc) (1)
- 110W (Tc) (1)
- 120W (Tc) (1)
- 136W (Tc) (1)
- 140W (Tc) (1)
- 150W (Tc) (2)
- 2.5W (Ta) (1)
- 2.5W (Ta), 28W (Tc) (1)
- 2.5W (Tc) (2)
- 300W (Tc) (4)
- 312W (Tc) (1)
- 330W (Tc) (1)
- 341W (Tc) (1)
- 370W (Tc) (3)
- 375W (Tc) (2)
- 380W (Tc) (3)
- 60W (Tc) (1)
- 625mW (Ta) (1)
- 70W (Tc) (1)
- 79W (Tc) (1)
- Applied Filters :
30 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VIEW | Infineon Technologies | MOSFET P-CH 20V 5.3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | P-Channel | - | 20V | 5.3A (Ta) | 60 mOhm @ 5.3A, 10V | 2.5V @ 250µA | 25nC @ 10V | 860pF @ 10V | 4.5V, 10V | ±12V | 2.5W (Tc) | ||||
|
|
VIEW | Infineon Technologies | MOSFET P-CH 20V 5.3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1 | P-Channel | - | 20V | 5.3A (Ta) | 60 mOhm @ 5.3A, 10V | 2.5V @ 250µA | 25nC @ 10V | 860pF @ 10V | 4.5V, 10V | ±12V | 2.5W (Tc) | |||
|
|
VIEW | Infineon Technologies | MOSFET N-CH 30V 260A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 30V | 260A (Tc) | 3 mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 5890pF @ 15V | 4.5V, 10V | ±20V | 330W (Tc) | |||
|
|
VIEW | STMicroelectronics | MOSFET N-CH 30V 80A TO-220 | TO-220-3 | STripFET™ II | Tube | MOSFET (Metal Oxide) | Through Hole | 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 30V | 80A (Tc) | 4.5 mOhm @ 40A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 5500pF @ 25V | 4.5V, 10V | ±20V | 300W (Tc) | |||
|
|
VIEW | STMicroelectronics | MOSFET N-CH 100V 40A TO-220 | TO-220-3 | STripFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 100V | 40A (Tc) | 33 mOhm @ 20A, 10V | 2.5V @ 250µA | 64nC @ 5V | 2300pF @ 25V | 5V, 10V | ±17V | 150W (Tc) | |||
|
|
99
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 190A D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK (7-Lead) | 0 | 1 | N-Channel | - | 100V | 190A (Tc) | 3.9 mOhm @ 110A, 10V | 2.5V @ 250µA | 140nC @ 4.5V | 11490pF @ 50V | 4.5V, 10V | ±16V | 370W (Tc) | ||||
|
|
39
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 240A D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK (7-Lead) | 0 | 1 | N-Channel | - | 40V | 240A (Tc) | 1.4 mOhm @ 200A, 10V | 2.5V @ 250µA | 180nC @ 4.5V | 10990pF @ 40V | 4.5V, 10V | ±20V | 380W (Tc) | ||||
|
|
596
In-stock
|
Infineon Technologies | MOSFET P-CH 30V 11A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | P-Channel | - | 30V | 11A (Ta) | 13.5 mOhm @ 11A, 10V | 2.5V @ 250µA | 110nC @ 10V | 4030pF @ 25V | 4.5V, 10V | ±20V | 2.5W (Ta) | ||||
|
|
233
In-stock
|
STMicroelectronics | MOSFET N-CH 30V 80A TO220 | TO-220-3 | DeepGATE™, STripFET™ VI | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220AB | 0 | 1 | N-Channel | - | 30V | 80A (Tc) | 3.3 mOhm @ 40A, 10V | 2.5V @ 250µA | 40nC @ 4.5V | 4040pF @ 25V | 4.5V, 10V | ±20V | 110W (Tc) | |||
|
|
255
In-stock
|
STMicroelectronics | MOSFET N-CH 30V 80A TO220 | TO-220-3 | DeepGATE™, STripFET™ VI | Tube | MOSFET (Metal Oxide) | Through Hole | 175°C (TJ) | Active | TO-220 | 0 | 1 | N-Channel | - | 30V | 80A (Tc) | 3.5 mOhm @ 40A, 10V | 2.5V @ 250µA | 42nC @ 4.5V | 3100pF @ 25V | 4.5V, 10V | ±20V | 140W (Tc) | |||
|
|
650
In-stock
|
STMicroelectronics | MOSFET N-CH 30V 90A TO-220 | TO-220-3 | STripFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -65°C ~ 175°C (TJ) | Not For New Designs | TO-220AB | 0 | 1 | N-Channel | - | 30V | 90A (Tc) | 6.5 mOhm @ 45A, 10V | 2.5V @ 250µA | 47nC @ 5V | 2700pF @ 25V | 5V, 10V | ±20V | 150W (Tc) | |||
|
|
165
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 195A D2-PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | N-Channel | - | 40V | 195A (Tc) | 1.7 mOhm @ 195A, 10V | 2.5V @ 250µA | 162nC @ 4.5V | 10315pF @ 25V | 4.5V, 10V | ±20V | 375W (Tc) | ||||
|
|
8,850
In-stock
|
Infineon Technologies | MOSFET N-CH 80V 30A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | N-Channel | - | 80V | 30A (Tc) | 28 mOhm @ 23A, 10V | 2.5V @ 250µA | 33nC @ 4.5V | 1890pF @ 25V | 4.5V, 10V | ±16V | 120W (Tc) | ||||
|
|
163
In-stock
|
STMicroelectronics | MOSFET N-CH 30V 100A I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | STripFET™ III | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | I2PAK | 0 | 1 | N-Channel | - | 30V | 100A (Tc) | 3.2 mOhm @ 50A, 10V | 2.5V @ 250µA | 88nC @ 5V | 6200pF @ 25V | 4.5V, 10V | ±16V | 300W (Tc) | |||
|
|
2,372
In-stock
|
STMicroelectronics | MOSFET N-CH 55V 80A I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | STripFET™ II | Tube | MOSFET (Metal Oxide) | Through Hole | 175°C (TJ) | Obsolete | I2PAK | 0 | 1 | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 40A, 10V | 2.5V @ 250µA | 100nC @ 4.5V | 4350pF @ 25V | 5V, 10V | ±16V | 300W (Tc) | |||
|
|
1,738
In-stock
|
STMicroelectronics | MOSFET N-CH 30V 75A TO-220AB | TO-220-3 | DeepGATE™, STripFET™ VI | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220 | 0 | 1 | N-Channel | - | 30V | 75A (Tc) | 5.9 mOhm @ 37.5A, 10V | 2.5V @ 250µA | 23.8nC @ 4.5V | 2030pF @ 25V | 4.5V, 10V | ±20V | 60W (Tc) | |||
|
|
764
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 195A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 60V | 195A (Tc) | 2.4 mOhm @ 165A, 10V | 2.5V @ 250µA | 140nC @ 4.5V | 11210pF @ 50V | 4.5V, 10V | ±16V | 380W (Tc) | |||
|
|
103
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 180A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 100V | 180A (Tc) | 4.3 mOhm @ 110A, 10V | 2.5V @ 250µA | 130nC @ 4.5V | 11360pF @ 50V | 4.5V, 10V | ±16V | 370W (Tc) | |||
|
|
871
In-stock
|
STMicroelectronics | MOSFET N-CH 55V 120A TO-220 | TO-220-3 | STripFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220-3 | 0 | 1 | N-Channel | - | 55V | 120A (Tc) | 3.7 mOhm @ 30A, 10V | 2.5V @ 250µA | 80nC @ 5V | 6200pF @ 25V | 5V, 10V | ±18V | 312W (Tc) | |||
|
|
525
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 195A TO-247AC | TO-247-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-247AC | 0 | 1 | N-Channel | - | 40V | 195A (Tc) | 1.7 mOhm @ 195A, 10V | 2.5V @ 250µA | 162nC @ 4.5V | 10315pF @ 25V | 4.5V, 10V | ±20V | 341W (Tc) | |||
|
|
1,975
In-stock
|
STMicroelectronics | MOSFET N-CH 55V 80A TO-220 | TO-220-3 | STripFET™ II | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 40A, 10V | 2.5V @ 250µA | 110nC @ 5V | 4050pF @ 25V | 5V, 10V | ±15V | 300W (Tc) | |||
|
|
1,909
In-stock
|
STMicroelectronics | MOSFET N-CH 30V 120A TO-220AB | TO-220-3 | STripFET™ H6 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220 | 0 | 1 | N-Channel | - | 30V | 120A (Tc) | 3.2 mOhm @ 60A, 10V | 2.5V @ 250µA | 42nC @ 4.5V | 3500pF @ 25V | 4.5V, 10V | ±20V | 136W (Tc) | |||
|
|
185
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 180A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 100V | 180A (Tc) | 4.3 mOhm @ 110A, 10V | 2.5V @ 250µA | 130nC @ 4.5V | 11360pF @ 50V | 4.5V, 10V | ±16V | 370W (Tc) | |||
|
|
5,662
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 195A TO220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 40V | 195A (Tc) | 1.7 mOhm @ 195A, 10V | 2.5V @ 250µA | 162nC @ 4.5V | 10315pF @ 25V | 4.5V, 10V | ±20V | 375W (Tc) | |||
|
|
1,024
In-stock
|
onsemi | MOSFET NCH 30V 6.9A IPAK TRIMMED | TO-251-3 Stub Leads, IPak | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | I-PAK | 0 | 1 | N-Channel | - | 30V | 6.9A (Ta), 35A (Tc) | 15 mOhm @ 30A, 10V | 2.5V @ 250µA | 14.1nC @ 11.5V | 770pF @ 12V | 4.5V, 11.5V | ±20V | 1.26W (Ta), 32.6W (Tc) | |||
|
|
12,003
In-stock
|
onsemi | MOSFET N-CH 60V 400MA TO-92 | TO-226-3, TO-92-3 (TO-226AA) | - | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-92-3 | 10000 | 1 | N-Channel | - | 60V | 400mA (Ta) | 2 Ohm @ 500mA, 10V | 2.5V @ 250µA | - | 50pF @ 25V | 4.5V, 10V | ±20V | 625mW (Ta) | |||
|
|
6,223
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 195A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 60V | 195A (Tc) | 2.4 mOhm @ 165A, 10V | 2.5V @ 250µA | 140nC @ 4.5V | 11210pF @ 50V | 4.5V, 10V | ±16V | 380W (Tc) | |||
|
|
2,149
In-stock
|
STMicroelectronics | MOSFET N-CH 60V 30A TO-220 | TO-220-3 | STripFET™ II | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 60V | 30A (Tc) | 40 mOhm @ 15A, 10V | 2.5V @ 250µA | 17nC @ 5V | 660pF @ 25V | 5V, 10V | ±18V | 70W (Tc) | |||
|
|
9,330
In-stock
|
onsemi | MOSFET N-CH 60V 32A TO-220 | TO-220-3 | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 60V | 32A (Tc) | 35 mOhm @ 16A, 10V | 2.5V @ 250µA | 20nC @ 5V | 1040pF @ 25V | 5V, 10V | ±20V | 79W (Tc) | |||
|
|
6,057
In-stock
|
onsemi | MOSFET N-CH 60V 11A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | I-PAK | 0 | 1 | N-Channel | - | 60V | 11A (Tc) | 115 mOhm @ 5.5A, 10V | 2.5V @ 250µA | 6.4nC @ 5V | 350pF @ 25V | 5V, 10V | ±20V | 2.5W (Ta), 28W (Tc) |