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- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 100V 100A TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | PG-TO-220-3 | 0 | 500 | N-Channel | - | 100V | 100A (Tc) | 5.1 mOhm @ 100A, 10V | 2.4V @ 250µA | 163nC @ 10V | 15600pF @ 50V | 4.5V, 10V | ±20V | 300W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 3.9A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | SOT-223 | 0 | 1680 | N-Channel | - | 30V | 3.9A (Ta) | 45 mOhm @ 3.9A, 10V | 2.4V @ 250µA | 14nC @ 5V | 530pF @ 25V | 4V, 10V | ±16V | 1W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 3.9A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223 | 0 | 80 | N-Channel | - | 30V | 3.9A (Ta) | 45 mOhm @ 3.9A, 10V | 2.4V @ 250µA | 14nC @ 5V | 530pF @ 25V | 4V, 10V | ±16V | 1W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 195A | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262-3 | 0 | 1000 | N-Channel | - | 60V | 195A (Tc) | 1.95 mOhm @ 100A, 10V | 2.4V @ 250µA | 255nC @ 4.5V | 15330pF @ 25V | 4.5V, 10V | ±20V | 375W (Tc) | |||
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VIEW | Texas instruments | NEW LF VERSION OF CSD18502KCS | TO-220-3 | NexFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220-3 | 0 | 550 | N-Channel | - | 40V | 194A (Ta) | 2.6 mOhm @ 100A, 10V | 2.4V @ 250µA | 64nC @ 10V | 5940pF @ 20V | 4.5V, 10V | ±20V | 188W (Ta) | |||
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973
In-stock
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Infineon Technologies | MOSFET NCH 40V 240A D2PAK | TO-263-7, D²Pak (6 Leads + Tab) | Automotive, AEC-Q101, HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK (7-Lead) | 0 | 1 | N-Channel | - | 40V | 240A (Tc) | 0.75 mOhm @ 100A, 10V | 2.4V @ 250µA | 266nC @ 4.5V | 16488pF @ 25V | 4.5V, 10V | ±16V | 375W (Tc) | |||
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852
In-stock
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Infineon Technologies | MOSFET N-CH 60V 195A | TO-220-3 | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 60V | 195A (Tc) | 1.9 mOhm @ 100A, 10V | 2.4V @ 250µA | 258nC @ 4.5V | 15570pF @ 25V | 4.5V, 10V | ±20V | 375W (Tc) | |||
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232
In-stock
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Texas instruments | MOSFET N-CH 60V 200A TO-220-3 | TO-220-3 | NexFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220-3 | 0 | 1 | N-Channel | - | 60V | 200A (Ta) | 2 mOhm @ 100A, 10V | 2.4V @ 250µA | 81nC @ 10V | 6620pF @ 30V | 4.5V, 10V | ±20V | 300W (Tc) |
