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Supplier Device Package :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.269
RFQ
2,500
In-stock
Diodes Incorporated MOSFET P-CH 40V 20A TO252 TO-252-3, DPak (2 Leads + Tab), SC-63 - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active TO-252 0 2500 P-Channel   - 40V 20A (Tc) 45 mOhm @ 4.4A, 10V 3V @ 250µA 23.2nC @ 10V 1328pF @ 20V 4.5V, 10V ±20V 1.6W (Ta)
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Per Unit
$0.314
RFQ
5,000
In-stock
Diodes Incorporated MOSFET 2P-CH 40V 5.1A 8SOIC 8-SOIC (0.154", 3.90mm Width) - Tape & Reel (TR)   Surface Mount -55°C ~ 150°C (TJ) Active 8-SO 0 2500 2 P-Channel (Dual) 1.3W Logic Level Gate 40V 5.1A 45 mOhm @ 4.4A, 10V 3V @ 250µA 21.5nC @ 10V 1154pF @ 20V      
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