- Series :
- Part Status :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 10.8A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | N-Channel | - | 30V | 10.8A (Ta) | 14 mOhm @ 15A, 4.5V | 3V @ 250µA | 26nC @ 5V | 1801pF @ 10V | 4.5V | ±20V | 2.5W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 8.3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | N-Channel | - | 30V | 8.3A (Ta) | 25 mOhm @ 7A, 4.5V | 3V @ 250µA | 14nC @ 5V | - | 4.5V | ±20V | 2.5W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 8.3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 3800 | N-Channel | Schottky Diode (Isolated) | 30V | 8.3A (Ta) | 25 mOhm @ 7A, 4.5V | 3V @ 250µA | 14nC @ 4.5V | - | 4.5V | ±20V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 13A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | N-Channel | - | 30V | 13A (Ta) | 11 mOhm @ 7A, 4.5V | 3V @ 250µA | 31nC @ 5V | - | 4.5V | ±12V | 2.5W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 13A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 3800 | N-Channel | - | 30V | 13A (Ta) | 11 mOhm @ 7A, 4.5V | 3V @ 250µA | 31nC @ 5V | - | 4.5V | ±12V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 9A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | N-Channel | - | 40V | 9A (Ta) | 17 mOhm @ 9A, 10V | 3V @ 250µA | 23nC @ 4.5V | 2000pF @ 20V | 4.5V, 10V | ±20V | 2.5W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET P-CH 40V 6.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | P-Channel | - | 40V | 6.2A (Ta) | 41 mOhm @ 6.2A, 10V | 3V @ 250µA | 80nC @ 10V | 3220pF @ 25V | 4.5V, 10V | ±20V | 2.5W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET 2P-CH 20V 2.3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | 2 P-Channel (Dual) | 2W | Logic Level Gate | 20V | 2.3A | 250 mOhm @ 1A, 10V | 3V @ 250µA | 25nC @ 10V | 290pF @ 15V | ||||||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 20V 3.5A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 20V | 3.5A | 100 mOhm @ 1.8A, 10V | 3V @ 250µA | 15nC @ 10V | 320pF @ 15V |
