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- Package / Case :
- Packaging :
- Part Status :
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- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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2,500
In-stock
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Diodes Incorporated | MOSFET PCH 60V 3A SOT223 | TO-261-4, TO-261AA | Automotive, AEC-Q101 | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223 | 2500 | 2500 | P-Channel | - | 60V | 3A (Ta) | 150 mOhm @ 2.2A, 10V | 3V @ 250µA | 14nC @ 10V | 708pF @ 30V | 4.5V, 10V | ±20V | 1.2W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N/P-CH 30V 3.5A/2.3A 8SO | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 665 | N and P-Channel | 2W | Logic Level Gate | 30V | 3.5A, 2.3A | 100 mOhm @ 2.2A, 10V | 3V @ 250µA | 14nC @ 10V | 190pF @ 15V | |||||||
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VIEW | Infineon Technologies | MOSFET N/P-CH 30V 3.5A/2.3A 8SO | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | 8-SO | 0 | 4000 | N and P-Channel | 2W | Logic Level Gate | 30V | 3.5A, 2.3A | 100 mOhm @ 2.2A, 10V | 3V @ 250µA | 14nC @ 10V | 190pF @ 15V | |||||||
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9,000
In-stock
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onsemi | MOSFET 2N-CH 30V 7.5A/10A PWR56 | 8-PowerWDFN | PowerTrench® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-MLP (5x6), Power56 | 0 | 3000 | 2 N-Channel (Dual) | 1W | Logic Level Gate | 30V | 7.5A, 10A | 21.5 mOhm @ 7.5A, 10V | 3V @ 250µA | 14nC @ 10V | 665pF @ 15V |
