MOSFET - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Package / Case	Series	Packaging	Technology	Mounting Type	Operating Temperature	Part Status	Supplier Device Package	Factory Stock	Minimum Quantity	FET Type	Power - Max	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max)
	IRF7469		GET PRICE VIEW	PDF RFQ		Infineon Technologies	MOSFET N-CH 40V 9A 8-SOIC	8-SOIC (0.154", 3.90mm Width)	HEXFET®	Tube	MOSFET (Metal Oxide)	Surface Mount	-55°C ~ 150°C (TJ)	Obsolete	8-SO	0	475	N-Channel		-	40V	9A (Ta)	17 mOhm @ 9A, 10V	3V @ 250µA	23nC @ 4.5V	2000pF @ 20V	4.5V, 10V	±20V	2.5W (Ta)
	AUIRF7342Q		GET PRICE VIEW	PDF RFQ		Infineon Technologies	MOSFET 2P-CH 55V 3.4A 8SOIC	8-SOIC (0.154", 3.90mm Width)	HEXFET®	Tube		Surface Mount	-55°C ~ 150°C (TJ)	Obsolete	8-SO	0	475	2 P-Channel (Dual)	2W	Logic Level Gate	55V	3.4A	105 mOhm @ 3.4A, 10V	3V @ 250µA	38nC @ 10V	690pF @ 25V
	AUIRF7319Q		GET PRICE VIEW	PDF RFQ		Infineon Technologies	MOSFET N/P-CH 30V 8SOIC	8-SOIC (0.154", 3.90mm Width)	HEXFET®	Tube		Surface Mount	-55°C ~ 150°C (TJ)	Obsolete	8-SO	0	475	N and P-Channel	2W	Logic Level Gate	30V	6.5A, 4.9A	29 mOhm @ 5.8A, 10V	3V @ 250µA	33nC @ 10V	650pF @ 25V
	AUIRF7316Q		GET PRICE VIEW	PDF RFQ		Infineon Technologies	MOSFET 2P-CH 30V 4.9A 8SOIC	8-SOIC (0.154", 3.90mm Width)	HEXFET®	Tube		Surface Mount	-55°C ~ 150°C (TJ)	Obsolete	8-SO	0	475	2 P-Channel (Dual)	2W	Logic Level Gate	30V	-	58 mOhm @ 4.9A, 10V	3V @ 250µA	34nC @ 10V	710pF @ 25V

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