- Manufacture :
- Series :
- Packaging :
- Part Status :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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VIEW | Infineon Technologies | MOSFET N/P-CH 25V 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1 | N and P-Channel | 2W | Standard | 25V | 3.5A, 2.3A | 100 mOhm @ 1A, 10V | 3V @ 250µA | 27nC @ 10V | 330pF @ 15V | |||
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VIEW | Diodes Incorporated | MOSFET 2N/2P-CHA 60V 3.1A 8SO | 8-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 2500 | 2 N and 2 P-Channel (H-Bridge) | 1.6W | Standard | 60V | 3.1A, 2.4A | 100 mOhm @ 1A, 10V | 3V @ 250µA | 11.5nC @ 10V | 731pF @ 20V | |||
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3,691
In-stock
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Infineon Technologies | MOSFET N/P-CH 25V 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | N and P-Channel | 2W | Standard | 25V | 3.5A, 2.3A | 100 mOhm @ 1A, 10V | 3V @ 250µA | 27nC @ 10V | 330pF @ 15V | ||||
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4,000
In-stock
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Infineon Technologies | MOSFET N/P-CH 25V 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | N and P-Channel | 2W | Standard | 25V | 3.5A, 2.3A | 100 mOhm @ 1A, 10V | 3V @ 250µA | 27nC @ 10V | 330pF @ 15V |
