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8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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2,000
In-stock
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Diodes Incorporated | MOSFET N-CH 60V 5.6A POWERDI333 | 8-PowerWDFN | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerDI3333-8 | 0 | 2000 | N-Channel | - | 60V | 5.6A (Ta), 18A (Tc) | 50 mOhm @ 4.5A, 10V | 3V @ 250µA | 25nC @ 10V | 1480pF @ 30V | 4.5V, 10V | ±20V | 930mW (Ta) | ||||
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4,500
In-stock
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onsemi | MOSFET N-CH 60V 8A 8-WDFN | 8-PowerWDFN | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | 8-WDFN (3.3x3.3) | 0 | 1500 | N-Channel | - | 60V | 8A (Ta) | 24 mOhm @ 7.5A, 10V | 3V @ 250µA | 25nC @ 10V | 850pF @ 25V | 4.5V, 10V | ±20V | 3.1W (Ta), 19W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N/P-CH 30V 5.8A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 570 | N and P-Channel | 2.5W | Logic Level Gate | 30V | 5.8A, 4.3A | 45 mOhm @ 5.8A, 10V | 3V @ 250µA | 25nC @ 10V | 520pF @ 25V | |||||||
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VIEW | onsemi | MOSFET 2N-CH 50V 3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SOIC | 0 | 3000 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 50V | 3A | 130 mOhm @ 3A, 10V | 3V @ 250µA | 25nC @ 10V | - | |||||||
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VIEW | Infineon Technologies | MOSFET 2P-CH 20V 2.3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | 2 P-Channel (Dual) | 2W | Logic Level Gate | 20V | 2.3A | 250 mOhm @ 1A, 10V | 3V @ 250µA | 25nC @ 10V | 290pF @ 15V | ||||||||
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VIEW | onsemi | MOSFET 3N/3P-CH 30V 3A SO16 | 16-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 16-SOIC | 0 | 2500 | 3 N and 3 P-Channel (3-Phase Bridge) | 1.4W | Logic Level Gate | 30V | 3A | 90 mOhm @ 3A, 10V | 3V @ 250µA | 25nC @ 10V | 360pF @ 10V | |||||||
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VIEW | Infineon Technologies | MOSFET N/P-CH 30V 5.8A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | N and P-Channel | 2.5W | Logic Level Gate | 30V | 5.8A, 4.3A | 45 mOhm @ 5.8A, 10V | 3V @ 250µA | 25nC @ 10V | 520pF @ 25V | |||||||
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VIEW | Infineon Technologies | MOSFET 2P-CH 20V 2.3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | 2 P-Channel (Dual) | 2W | Logic Level Gate | 20V | 2.3A | 250 mOhm @ 1A, 10V | 3V @ 250µA | 25nC @ 10V | 290pF @ 15V |
