- Packaging :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 55V 25A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK (TO-252AA) | 0 | 825 | N-Channel | - | 55V | 25A (Tc) | 37 mOhm @ 15A, 10V | 3V @ 250µA | 20nC @ 5V | 710pF @ 25V | 5V, 10V | ±16V | 57W (Tc) | |||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 55V 25A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 3000 | N-Channel | - | 55V | 25A (Tc) | 37 mOhm @ 15A, 10V | 3V @ 250µA | 20nC @ 5V | 710pF @ 25V | 5V, 10V | ±16V | 57W (Tc) | |||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 55V 25A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1125 | N-Channel | - | 55V | 25A (Tc) | 37 mOhm @ 15A, 10V | 3V @ 250µA | 20nC @ 5V | 710pF @ 25V | 5V, 10V | ±16V | 57W (Tc) | |||||
|
|
|
2,000
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 25A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK | 0 | 2000 | N-Channel | - | 55V | 25A (Tc) | 37 mOhm @ 15A, 10V | 3V @ 250µA | 20nC @ 5V | 710pF @ 25V | 5V, 10V | ±16V | 57W (Tc) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET 2P-CH 30V 4.9A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 475 | 2 P-Channel (Dual) | 2W | Logic Level Gate | 30V | - | 58 mOhm @ 4.9A, 10V | 3V @ 250µA | 34nC @ 10V | 710pF @ 25V | |||||||
|
|
|
VIEW | Infineon Technologies | MOSFET 2P-CH 30V 4.9A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | 2 P-Channel (Dual) | 2W | Logic Level Gate | 30V | - | 58 mOhm @ 4.9A, 10V | 3V @ 250µA | 34nC @ 10V | 710pF @ 25V |
