- Series :
- Packaging :
- Part Status :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 55V 5A SOT-223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | SOT-223 | 0 | 2000 | N-Channel | 55V | 5A (Tc) | 60 mOhm @ 3A, 10V | 3V @ 250µA | 11nC @ 5V | 380pF @ 25V | 4.5V, 10V | ±16V | 1W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 5A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223 | 0 | 800 | N-Channel | 55V | 5A (Tc) | 60 mOhm @ 3A, 10V | 3V @ 250µA | 11nC @ 5V | 380pF @ 25V | 4.5V, 10V | ±16V | 1W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET NCH 55V 5A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223 | 0 | 2500 | N-Channel | 55V | 5A (Ta) | 60 mOhm @ 3A, 10V | 3V @ 250µA | 11nC @ 5V | 380pF @ 25V | 4.5V, 10V | ±16V | 1W (Ta) | |||
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7,500
In-stock
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Diodes Incorporated | MOSFET P-CH 100V 2.3A SOT223 | TO-261-4, TO-261AA | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223 | 0 | 2500 | P-Channel | 100V | 2.3A (Ta), 6A (Tc) | 250 mOhm @ 5A, 10V | 3V @ 250µA | 17.5nC @ 10V | 1239pF @ 25V | 4.5V, 10V | ±20V | 2W (Ta), 13.7W (Tc) | |||
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20,000
In-stock
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onsemi | MOSFET P-CH 30V 3.7A SOT223 | TO-261-4, TO-261AA | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223 | 0 | 4000 | P-Channel | 30V | 3.7A (Ta) | 100 mOhm @ 5.2A, 10V | 3V @ 250µA | 38nC @ 10V | 950pF @ 25V | 4.5V, 10V | ±20V | 1.56W (Ta) | |||
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2,500
In-stock
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Diodes Incorporated | MOSFET N-CH 100V 3.6A SOT223 | TO-261-4, TO-261AA | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223 | 0 | 2500 | N-Channel | 100V | 3.6A (Ta) | 110 mOhm @ 3.3A, 10V | 3V @ 250µA | 10nC @ 10V | 549pF @ 50V | 6V, 10V | ±20V | 1.3W (Ta) | |||
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31,000
In-stock
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Diodes Incorporated | MOSFET N-CH 60V 6.9A SOT223 | TO-261-4, TO-261AA | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223 | 0 | 1000 | N-Channel | 60V | 5.4A (Ta) | 40 mOhm @ 8.2A, 10V | 3V @ 250µA | 24.2nC @ 5V | 1407pF @ 40V | 10V | ±20V | 2W (Ta) | |||
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25,000
In-stock
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Infineon Technologies | MOSFET N-CH 55V 5A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223 | 0 | 2500 | N-Channel | 55V | 5A (Tc) | 60 mOhm @ 3A, 10V | 3V @ 250µA | 11nC @ 5V | 380pF @ 25V | 4.5V, 10V | ±16V | 1W (Ta) | |||
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4,000
In-stock
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STMicroelectronics | MOSFET N-CH 200V 1A SOT-223 | TO-261-4, TO-261AA | STripFET™ II | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223 | 0 | 4000 | N-Channel | 200V | 1A (Tc) | 1.5 Ohm @ 500mA, 10V | 3V @ 250µA | 0.9nC @ 10V | 150pF @ 25V | 5V, 10V | ±20V | 3.3W (Tc) | |||
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20,000
In-stock
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Diodes Incorporated | MOSFET P-CH 100V 2.3A/6A SOT223 | TO-261-4, TO-261AA | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223 | 0 | 2500 | P-Channel | 100V | 2.3A (Ta), 6A (Tc) | 250 mOhm @ 5A, 10V | 3V @ 250µA | 17.5nC @ 10V | 1239pF @ 25V | 4.5V, 10V | ±20V | 2W (Ta), 13.7W (Tc) |
