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Part Status :
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 20V 77A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 550 N-Channel - 20V 77A (Tc) 9 mOhm @ 15A, 10V 3V @ 250µA 19nC @ 4.5V 1996pF @ 10V 4.5V, 10V ±20V 87W (Tc)
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Infineon Technologies MOSFET N-CH 30V 116A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D2PAK 0 550 N-Channel - 30V 116A (Tc) 7 mOhm @ 60A, 10V 3V @ 250µA 60nC @ 4.5V 3290pF @ 25V 4.5V, 10V ±16V 3.8W (Ta), 180W (Tc)
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