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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET P-CH 40V 4.6A 8-TSSOP 8-TSSOP (0.173", 4.40mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-TSSOP 0 8000 P-Channel   - 40V 4.6A (Ta) 46 mOhm @ 4.6A, 10V 3V @ 250µA 38nC @ 4.5V 3150pF @ 25V 4.5V, 10V ±20V 1.5W (Ta)
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Diodes Incorporated MOSFET 2N-CH 20V 2.5A 8MSOP 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) - Tape & Reel (TR)   Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-MSOP 0 8000 2 N-Channel (Dual) 1.04W Logic Level Gate 20V 2.5A 130 mOhm @ 1.7A, 4.5V 3V @ 250µA 6nC @ 4.5V 700pF @ 15V      
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