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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 40V 10A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 4085 N-Channel   - 40V 10A (Ta) 13 mOhm @ 10A, 10V 3V @ 250µA 32nC @ 4.5V 2820pF @ 20V 4.5V, 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 30V 11A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 4085 N-Channel   - 30V 11A (Ta) 12.5 mOhm @ 11A, 10V 3V @ 250µA 23nC @ 4.5V 2100pF @ 15V 4.5V, 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 20V 12A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 4085 N-Channel   - 20V 12A (Ta) 10 mOhm @ 12A, 10V 3V @ 250µA 19nC @ 4.5V 2050pF @ 10V 4.5V, 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET 2N-CH 30V 6.5A 8SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube   Surface Mount -55°C ~ 175°C (TJ) Obsolete 8-SO 0 4085 2 N-Channel (Dual) 2.4W Logic Level Gate 30V 6.9A 29 mOhm @ 6.9A, 10V 3V @ 250µA 33nC @ 10V 755pF @ 25V      
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