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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.323
RFQ
10,000
In-stock
Diodes Incorporated MOSFET N-CH 40V 5.4A 8SO 8-SOIC (0.154", 3.90mm Width) - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-SOP 0 2500 N-Channel   - 40V 5.4A (Ta) 34 mOhm @ 6A, 10V 3V @ 250µA 10nC @ 10V 453pF @ 20V 4.5V, 10V ±20V 1.56W (Ta)
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Per Unit
$0.254
RFQ
2,500
In-stock
Diodes Incorporated MOSFET N-CH 100V 3.6A SOT223 TO-261-4, TO-261AA - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-223 0 2500 N-Channel   - 100V 3.6A (Ta) 110 mOhm @ 3.3A, 10V 3V @ 250µA 10nC @ 10V 549pF @ 50V 6V, 10V ±20V 1.3W (Ta)
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onsemi MOSFET 2N-CH 30V 3.1A 8-SOIC 8-SOIC (0.154", 3.90mm Width) - Tape & Reel (TR)   Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SOIC 0 2500 2 N-Channel (Dual) 900mW Logic Level Gate 30V 3.1A 100 mOhm @ 3.1A, 10V 3V @ 250µA 10nC @ 10V 190pF @ 15V      
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RFQ
onsemi MOSFET 2N-CH 80V 8-SOIC 8-SOIC (0.154", 3.90mm Width) UltraFET™ Tape & Reel (TR)   Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SOIC 0 2500 2 N-Channel (Dual) 2.5W Logic Level Gate 80V - 200 mOhm @ 2.5A, 10V 3V @ 250µA 10nC @ 10V 270pF @ 25V      
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