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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.544
VIEW
RFQ
Infineon Technologies MOSFET NCH 55V 5A SOT223 TO-261-4, TO-261AA HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-223 0 2500 N-Channel 55V 5A (Ta) 60 mOhm @ 3A, 10V 3V @ 250µA 11nC @ 5V 380pF @ 25V 4.5V, 10V ±16V 1W (Ta)
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Per Unit
$0.312
RFQ
25,000
In-stock
Infineon Technologies MOSFET N-CH 55V 5A SOT223 TO-261-4, TO-261AA HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-223 0 2500 N-Channel 55V 5A (Tc) 60 mOhm @ 3A, 10V 3V @ 250µA 11nC @ 5V 380pF @ 25V 4.5V, 10V ±16V 1W (Ta)
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Per Unit
$0.271
RFQ
10,000
In-stock
onsemi MOSFET N-CH 60V 11A TO-252AA TO-252-3, DPak (2 Leads + Tab), SC-63 - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active TO-252AA 0 2500 N-Channel 60V 11A (Tc) 107 mOhm @ 8A, 5V 3V @ 250µA 11.3nC @ 10V 350pF @ 25V 5V ±16V 38W (Tc)
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