- Operating Temperature :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VIEW | Infineon Technologies | MOSFET N/P-CH 30V 5.8A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 570 | N and P-Channel | 2.5W | Logic Level Gate | 30V | 5.8A, 4.3A | 45 mOhm @ 5.8A, 10V | 3V @ 250µA | 25nC @ 10V | 520pF @ 25V | |||
|
|
|
VIEW | Infineon Technologies | MOSFET 2N-CH 55V 5.1A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | 8-SO | 0 | 570 | 2 N-Channel (Dual) | 2.4W | Logic Level Gate | 55V | 5.1A | 50 mOhm @ 5.1A, 10V | 3V @ 250µA | 44nC @ 10V | 780pF @ 25V | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N/P-CH 30V 4A/3A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 570 | N and P-Channel | 1.4W | Logic Level Gate | 30V | 4A, 3A | 50 mOhm @ 2.4A, 10V | 3V @ 250µA | 25nC @ 4.5V | 520pF @ 15V |
