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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
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RFQ
Diodes Incorporated MOSFET 2N-CH 40V 5.2A 8SOIC 8-SOIC (0.154", 3.90mm Width) - Tape & Reel (TR) Surface Mount -55°C ~ 150°C (TJ) Active 8-SO 0 2500 2 N-Channel (Dual) 1.42W Standard 40V 5.2A 31 mOhm @ 6A, 10V 3V @ 250µA 18.6nC @ 10V 945pF @ 20V
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Per Unit
$0.262
RFQ
2,500
In-stock
Diodes Incorporated MOSFET 2N-CH 40V 5.2A 8SO 8-SOIC (0.154", 3.90mm Width) - Tape & Reel (TR) Surface Mount -55°C ~ 150°C (TJ) Active 8-SO 0 2500 2 N-Channel (Dual) 1.42W Logic Level Gate 40V 5.2A 31 mOhm @ 6A, 10V 3V @ 250µA 18.6nC @ 10V 945pF @ 20V
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Per Unit
$0.292
RFQ
2,500
In-stock
Diodes Incorporated MOSFET 2N-CH 30V 10A 8SO 8-SOIC (0.154", 3.90mm Width) - Tape & Reel (TR) Surface Mount -55°C ~ 150°C (TJ) Active 8-SO 0 2500 2 N-Channel (Dual) 1.42W Logic Level Gate 30V 10A 20 mOhm @ 8.5A, 10V 3V @ 250µA 10.5nC @ 10V 478.9pF @ 16V
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