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- Rds On (Max) @ Id, Vgs :
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9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 80V 38A IPAK | TO-252-4, DPak (3 Leads + Tab) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | I-PAK (LF701) | 0 | 450 | N-Channel | - | 80V | 38A (Tc) | 29 mOhm @ 18A, 10V | 4V @ 250µA | 56nC @ 10V | 1710pF @ 25V | 10V | ±20V | 110W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 80V 38A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 6000 | N-Channel | - | 80V | 38A (Tc) | 29 mOhm @ 18A, 10V | 4V @ 250µA | 56nC @ 10V | 1710pF @ 25V | 10V | ±20V | 110W (Tc) | |||||
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VIEW | STMicroelectronics | MOSFET N-CH 100V 38A TO-220FP | TO-220-3 Full Pack | STripFET™ II | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220FP | 0 | 1 | N-Channel | - | 100V | 38A (Tc) | 15 mOhm @ 40A, 10V | 4V @ 250µA | 189nC @ 10V | 4300pF @ 25V | 10V | ±20V | 45W (Tc) | ||||
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VIEW | STMicroelectronics | MOSFET N-CH 60V 38A TO-220 | TO-220-3 | STripFET™ II | Tube | MOSFET (Metal Oxide) | Through Hole | 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 60V | 38A (Tc) | 28 mOhm @ 19A, 10V | 4V @ 250µA | 58nC @ 10V | 980pF @ 25V | 10V | ±20V | 80W (Tc) | ||||
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VIEW | STMicroelectronics | MOSFET N-CH 60V 38A D2PAK | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | STripFET™ II | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | 175°C (TJ) | Active | D2PAK | 0 | 1000 | N-Channel | - | 60V | 38A (Tc) | 28 mOhm @ 19A, 10V | 4V @ 250µA | 58nC @ 10V | 980pF @ 25V | 10V | ±20V | 80W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 80V 38A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK | 0 | 2000 | N-Channel | - | 80V | 38A (Tc) | 29 mOhm @ 18A, 10V | 4V @ 250µA | 56nC @ 10V | 1710pF @ 25V | 10V | ±20V | 110W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 100V 38A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D2PAK | 0 | 800 | P-Channel | - | 100V | 38A (Tc) | 60 mOhm @ 38A, 10V | 4V @ 250µA | 230nC @ 10V | 2780pF @ 25V | 10V | ±20V | 3.1W (Ta), 170W (Tc) | ||||
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1,100
In-stock
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Infineon Technologies | MOSFET P-CH 100V 38A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-262 | 0 | 1 | P-Channel | - | 100V | 38A (Tc) | 60 mOhm @ 38A, 10V | 4V @ 250µA | 230nC @ 10V | 2780pF @ 25V | 10V | ±20V | 3.1W (Ta), 170W (Tc) | ||||
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6,400
In-stock
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Infineon Technologies | MOSFET P-CH 100V 38A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D2PAK | 0 | 800 | P-Channel | - | 100V | 38A (Tc) | 60 mOhm @ 38A, 10V | 4V @ 250µA | 230nC @ 10V | 2780pF @ 25V | 10V | ±20V | 3.1W (Ta), 170W (Tc) |