- Packaging :
- Mounting Type :
- Part Status :
- Supplier Device Package :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 8.7A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 6000 | N-Channel | - | 100V | 8.7A (Tc) | 190 mOhm @ 5.2A, 10V | 4V @ 250µA | 10nC @ 10V | 310pF @ 25V | 10V | ±20V | 35W (Tc) | ||||
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 8.7A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | IPAK (TO-251) | 0 | 1500 | N-Channel | - | 100V | 8.7A (Tc) | 190 mOhm @ 5.2A, 10V | 4V @ 250µA | 10nC @ 10V | 310pF @ 25V | 10V | ±20V | 35W (Tc) | ||||
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 8.7A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 3000 | N-Channel | - | 100V | 8.7A (Tc) | 190 mOhm @ 5.2A, 10V | 4V @ 250µA | 10nC @ 10V | 310pF @ 25V | 10V | ±20V | 35W (Tc) | ||||
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 8.7A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 2000 | N-Channel | - | 100V | 8.7A (Tc) | 190 mOhm @ 5.2A, 10V | 4V @ 250µA | 10nC @ 10V | 310pF @ 25V | 10V | ±20V | 35W (Tc) | ||||
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 8.7A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | IPAK (TO-251) | 0 | 75 | N-Channel | - | 100V | 8.7A (Tc) | 190 mOhm @ 5.2A, 10V | 4V @ 250µA | 10nC @ 10V | 310pF @ 25V | 10V | ±20V | 35W (Tc) | ||||
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 8.7A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 75 | N-Channel | - | 100V | 8.7A (Tc) | 190 mOhm @ 5.2A, 10V | 4V @ 250µA | 10nC @ 10V | 310pF @ 25V | 10V | ±20V | 35W (Tc) | ||||
|
26
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 8.7A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | N-Channel | - | 100V | 8.7A (Tc) | 190 mOhm @ 5.2A, 10V | 4V @ 250µA | 10nC @ 10V | 310pF @ 25V | 10V | ±20V | 35W (Tc) | |||||
|
6,000
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 8.7A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK | 0 | 2000 | N-Channel | - | 100V | 8.7A (Tc) | 190 mOhm @ 5.2A, 10V | 4V @ 250µA | 10nC @ 10V | 310pF @ 25V | 10V | ±20V | 35W (Tc) |