- Packaging :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
19 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 40V 202A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 200 | N-Channel | - | 40V | 75A (Tc) | 4 mOhm @ 95A, 10V | 4V @ 250µA | 200nC @ 10V | 7360pF @ 25V | 10V | ±20V | 3.8W (Ta), 200W (Tc) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 75V 100A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 800 | N-Channel | - | 75V | 100A (Tc) | 7.8 mOhm @ 78A, 10V | 4V @ 250µA | 250nC @ 10V | 5600pF @ 25V | 10V | ±20V | 3.8W (Ta), 200W (Tc) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 150V 43A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 150V | 43A (Tc) | 42 mOhm @ 22A, 10V | 4V @ 250µA | 200nC @ 10V | 2400pF @ 25V | 10V | ±20V | 3.8W (Ta), 200W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 150V 43A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1000 | N-Channel | - | 150V | 43A (Tc) | 42 mOhm @ 22A, 10V | 4V @ 250µA | 200nC @ 10V | 2400pF @ 25V | 10V | ±20V | 3.8W (Ta), 200W (Tc) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 40V 162A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 250 | N-Channel | - | 40V | 162A (Tc) | 4 mOhm @ 95A, 10V | 4V @ 250µA | 200nC @ 10V | 7360pF @ 25V | 10V | ±20V | 3.8W (Ta), 200W (Tc) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 75V 100A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 75V | 100A (Tc) | 7.8 mOhm @ 78A, 10V | 4V @ 250µA | 250nC @ 10V | 5600pF @ 25V | 10V | ±20V | 3.8W (Ta), 200W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 75V 100A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 50 | N-Channel | - | 75V | 100A (Tc) | 7.8 mOhm @ 78A, 10V | 4V @ 250µA | 250nC @ 10V | 5600pF @ 25V | 10V | ±20V | 3.8W (Ta), 200W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 75V 100A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 50 | N-Channel | - | 75V | 100A (Tc) | 7.8 mOhm @ 78A, 10V | 4V @ 250µA | 250nC @ 10V | 5600pF @ 25V | 10V | ±20V | 3.8W (Ta), 200W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET P-CH 55V 74A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | P-Channel | - | 55V | 74A (Tc) | 20 mOhm @ 38A, 10V | 4V @ 250µA | 180nC @ 10V | 3400pF @ 25V | 10V | ±20V | 3.8W (Ta), 200W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 150V 43A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 150V | 43A (Tc) | 42 mOhm @ 22A, 10V | 4V @ 250µA | 200nC @ 10V | 2400pF @ 25V | 10V | ±20V | 3.8W (Ta), 200W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET P-CH 100V 40A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 200 | P-Channel | - | 100V | 40A (Tc) | 60 mOhm @ 24A, 10V | 4V @ 250µA | 180nC @ 10V | 2700pF @ 25V | 10V | ±20V | 3.8W (Ta), 200W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 150V 43A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 50 | N-Channel | - | 150V | 43A (Tc) | 42 mOhm @ 22A, 10V | 4V @ 250µA | 200nC @ 10V | 2400pF @ 25V | 10V | ±20V | 3.8W (Ta), 200W (Tc) | |||
|
|
GET PRICE |
62,320
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 162A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 150 | N-Channel | - | 40V | 162A (Tc) | 4 mOhm @ 95A, 10V | 4V @ 250µA | 200nC @ 10V | 7360pF @ 25V | 10V | ±20V | 3.8W (Ta), 200W (Tc) | ||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 40V 162A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 150 | N-Channel | - | 40V | 162A (Tc) | 4 mOhm @ 95A, 10V | 4V @ 250µA | 200nC @ 10V | 7360pF @ 25V | 10V | ±20V | 3.8W (Ta), 200W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 150V 43A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 50 | N-Channel | - | 150V | 43A (Tc) | 42 mOhm @ 22A, 10V | 4V @ 250µA | 200nC @ 10V | 2400pF @ 25V | 10V | ±20V | 3.8W (Ta), 200W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 40V 202A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 800 | N-Channel | - | 40V | 75A (Tc) | 4 mOhm @ 95A, 10V | 4V @ 250µA | 200nC @ 10V | 7360pF @ 25V | 10V | ±20V | 3.8W (Ta), 200W (Tc) | |||
|
|
|
800
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 43A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 800 | N-Channel | - | 150V | 43A (Tc) | 42 mOhm @ 22A, 10V | 4V @ 250µA | 200nC @ 10V | 2400pF @ 25V | 10V | ±20V | 3.8W (Ta), 200W (Tc) | |||
|
|
|
2,048
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 162A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 40V | 162A (Tc) | 4 mOhm @ 95A, 10V | 4V @ 250µA | 200nC @ 10V | 7360pF @ 25V | 10V | ±20V | 3.8W (Ta), 200W (Tc) | |||
|
|
|
4,000
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 100A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 800 | N-Channel | - | 75V | 100A (Tc) | 7.8 mOhm @ 78A, 10V | 4V @ 250µA | 250nC @ 10V | 5600pF @ 25V | 10V | ±20V | 3.8W (Ta), 200W (Tc) |
